Chemical Vapor Deposition (CVD) is a method used to deposit films via exposure to volataile precursors. Some common examples are Plasma Enhanced CVD, where silane gas is ionized to combine with ammonia to form nitride, or nitrous oxide to form silica. ALD operates through alternating pulses of oranometallic precursors and water vapor to form a wide selection of complicated metal oxides. Acceptable materials vary from system to system so be sure to confirm with a staff member before introducing new substrates to a system. Additionally, be sure you understand the thermal limitations of your substrate.